ALD center Finland is a national centralised open access platform for research and education in atomic layer level materials processing techniques of Atomic Layer Deposition (ALD) and Atomic Layer Etching (ALEt). The center serves also as a valuable resource to other fields of research that require state-of-the-art techniques for thin film characterisation and resolving surface chemistry. ALD center Finland is formed by HelsinkiALD, Helsinki Accelerator Laboratory, and X-ray laboratory at the University of Helsinki. Find out more about us through our home pages.
ALD center Finland home units
HelsinkiALD - a unique combination of basic research and industrial collaboration
The HelsinkiALD group, led by Professor Mikko Ritala and Associate professor Matti Putkonen, is doing research in the field of inorganic materials chemistry. Our main research topic is thin films and Atomic Layer Deposition (ALD) but also other methods for thin film deposition and nanostructure preparation are studied.
Helsinki Accelerator Laboratory - Materials analysis, simulations and tailoring properties
The current research focus at the Helsinki Accelerator Laboratory is on materials of importance for nanotechnology, micro- and optoelectronics, spintronics, fusion technology and particle detectors. Their properties are studied by applying various ion beam based techniques as well as by computational means.
X-ray laboratory - specialized in the study of materials with X-rays.
The X-ray laboratory at the University of Helsinki has a strong tradition in X-ray spectroscopy and materials science. Their wide variety of in-house and synchrotron based research methods include X-ray imaging, spectroscopies, scattering, their combinations, and corresponding computational modeling.